Method of Manufacturing GaN-Based Film and Composite Substrate Used Therefor

ABSTRACT

The present method of manufacturing a GaN-based film includes the steps of preparing a composite substrate ( 10 ) including a support substrate ( 11 ) dissoluble in hydrofluoric acid and a single crystal film ( 13 ) arranged on a side of a main surface ( 11   m ) of the support substrate ( 11 ), a coefficient of thermal expansion in the main surface ( 11   m ) of the support substrate ( 11 ) being more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal, forming a GaN-based film ( 20 ) on a main surface ( 13   m ) of the single crystal film ( 13 ) arranged on the side of the main surface ( 11   m ) of the support substrate ( 11 ), and removing the support substrate ( 11 ) by dissolving the support substrate ( 11 ) in hydrofluoric acid. Thus, the method of manufacturing a GaN-based film capable of efficiently obtaining a GaN-based film having a large main surface area, less warpage, and good crystallinity, as well as a composite substrate used therefor are provided.

TECHNICAL FIELD

The present invention relates to a method of manufacturing a GaN-basedfilm having a large main surface area and less warpage and to acomposite substrate used therefor.

BACKGROUND ART

A GaN-based film is suitably used as a substrate and a semiconductorlayer in a semiconductor device such as a light emitting device and anelectronic device. A GaN substrate is best as a substrate formanufacturing such a GaN-based film, from a point of view of match orsubstantial match in lattice constant and coefficient of thermalexpansion between the substrate and the GaN-based film. A GaN substrate,however, is very expensive, and it is difficult to obtain such a GaNsubstrate having a large diameter that a diameter of a main surfaceexceeds 2 inches.

Therefore, a sapphire substrate is generally used as a substrate forforming a GaN-based film. A sapphire substrate and a GaN crystal aresignificantly different from each other in lattice constant andcoefficient of thermal expansion.

Therefore, in order to mitigate unmatch in lattice constant between asapphire substrate and a GaN crystal and to grow a GaN crystal havinggood crystallinity, for example, Japanese Patent Laying-Open No.04-297023 (PTL 1) discloses growing a GaN buffer layer on a sapphiresubstrate and growing a GaN crystal layer on the GaN buffer layer, ingrowing GaN crystal on the sapphire substrate.

In addition, in order to obtain a GaN film less in warpage by employinga substrate having a coefficient of thermal expansion close to that ofGaN crystal, for example, Japanese National Patent Publication No.2007-523472 (PTL 2) discloses a composite support substrate having oneor more pairs of layers having substantially the same coefficient ofthermal expansion with a central layer lying therebetween and having anoverall coefficient of thermal expansion substantially the same as acoefficient of thermal expansion of GaN crystal. Moreover, JapanesePatent Laying-Open No. 2003-165798 (PTL 3) discloses a multi-layeredsubstrate containing zircon ceramics or the like.

CITATION LIST Patent Literature

PTL 1: Japanese Patent Laying-Open No. 04-297023

PTL 2: Japanese National Patent Publication No. 2007-523472

PTL 3: Japanese Patent Laying-Open No. 2003-165798

SUMMARY OF INVENTION Technical Problem

According to Japanese Patent Laying-Open No. 04-297023 (PTL 1) above,GaN crystal grows as warping in a shape recessed in a direction ofgrowth of crystal, probably because crystal defects such as dislocationdisappear as a result of association during growth of the GaN crystal.

As described above, however, the sapphire substrate is much higher incoefficient of thermal expansion than GaN crystal, and hence grown GaNcrystal greatly warps in a shape projecting in a direction of growth ofcrystal during cooling after crystal growth and a GaN film great inwarpage in a shape projecting in the direction of growth of crystal isobtained. Here, as the main surface of the sapphire substrate has agreater diameter, warpage of the GaN crystal during cooling abovebecomes greater (specifically, warpage of the obtained GaN film issubstantially in proportion to a square of a diameter of the mainsurface of the sapphire substrate). Therefore, it becomes difficult toobtain a GaN film less in warpage as the main surface has a greaterdiameter.

The composite support substrate disclosed in Japanese National PatentPublication No. 2007-523472 (PTL 2) and the multi-layered substratedisclosed in Japanese Patent Laying-Open No. 2003-165798 (PTL 3) aboveeach have a coefficient of thermal expansion substantially the same asthat of the GaN crystal and hence warpage of the GaN layer grown thereoncan be less. Such a composite support substrate and a multi-layeredsubstrate, however, have a complicated structure, and design andformation of the structure is difficult. Therefore, cost for design andmanufacturing becomes very high and cost for manufacturing a GaN filmbecomes very high.

In addition, as a substrate, a sapphire substrate is employed inJapanese Patent Laying-Open No. 04-297023 (PTL 1), a composite supportsubstrate is employed in Japanese National Patent Publication No.2007-523472 (PTL 2), and a multi-layered substrate is employed inJapanese Patent Laying-Open No. 2003-165798 (PTL 3). Therefore, it hasbeen difficult to remove the substrate after a GaN film or a GaN layeris formed on the substrate and hence to take the GaN film or the GaNlayer.

An object of the present invention is to solve the problems above and toprovide a method of manufacturing a GaN-based film capable of taking aGaN-based film having a large main surface area, less warpage, and goodcrystallinity by using a composite substrate including a supportsubstrate, which has a coefficient of thermal expansion matching orsubstantially matching with that of a GaN crystal and is readily removedto form a GaN-based film having a large main surface area, less warpage,and good crystallinity, and thereafter removing the support substrate,and a composite substrate used therefor.

Solution to Problem

According to one aspect, the present invention is directed to acomposite substrate including a support substrate dissoluble inhydrofluoric acid and a single crystal film arranged on a side of a mainsurface of the support substrate, and a coefficient of thermal expansionin the main surface of the support substrate is more than 0.8 time andless than 1.2 times as high as a coefficient of thermal expansion of GaNcrystal.

In the composite substrate according to the present invention, thesupport substrate can contain at least any of zirconia and silica and aZrO₂—SiO₂ composite oxide formed of zirconia and silica. Alternatively,the support substrate can contain yttria stabilized zirconia and anAl₂O₃—SiO₂ composite oxide formed of alumina and silica. Here, a contentof yttria stabilized zirconia to the total of the Al₂O₃—SiO₂ compositeoxide and yttria stabilized zirconia can be not lower than 20 mass % andnot higher than 40 mass %. Further, a content of yttria to yttriastabilized zirconia can be not lower than 5 mol %. Furthermore, an areaof a main surface of the single crystal film of the composite substrateaccording to the present invention can be not smaller than 15 cm².

According to another aspect, the present invention is directed to amethod of manufacturing a GaN-based film including the steps ofpreparing a composite substrate including a support substrate dissolublein hydrofluoric acid and a single crystal film arranged on a side of amain surface of the support substrate, a coefficient of thermalexpansion in the main surface of the support substrate being more than0.8 time and less than 1.2 times as high as a coefficient of thermalexpansion of GaN crystal, forming a GaN-based film on a main surface ofthe single crystal film arranged on the side of the main surface of thesupport substrate, and removing the support substrate by dissolving thesupport substrate in hydrofluoric acid.

In the method of manufacturing a GaN-based film according to the presentinvention, the support substrate can contain at least any of zirconiaand silica and a ZrO₂—SiO₂ composite oxide formed of zirconia andsilica. Alternatively, the support substrate can contain yttriastabilized zirconia and an Al₂O₃—SiO₂ composite oxide formed of aluminaand silica. Here, a content of yttria stabilized zirconia to the totalof the Al₂O₃—SiO₂ composite oxide and yttria stabilized zirconia can benot lower than 20 mass % and not higher than 40 mass %. Further, acontent of yttria to yttria stabilized zirconia can be not lower than 5mol %. Furthermore, an area of the main surface of the single crystalfilm of the composite substrate according to the present invention canbe not smaller than 15 cm². The step of forming a GaN-based film caninclude sub steps of forming a GaN-based buffer layer on the mainsurface of the single crystal film and forming a GaN-based singlecrystal layer on a main surface of the GaN-based buffer layer.

Advantageous Effects of Invention

According to the present invention, a method of manufacturing aGaN-based film capable of taking a GaN-based film having a large mainsurface area, less warpage, and good crystallinity by using a compositesubstrate including a support substrate, which has a coefficient ofthermal expansion matching with or substantially matching with that of aGaN crystal and is readily removed to form a GaN-based film having alarge main surface area, less warpage, and good crystallinity, andthereafter removing the support substrate, and a composite substrateused therefor can be provided.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a schematic cross-sectional view showing one example of acomposite substrate according to the present invention.

FIG. 2 is a schematic cross-sectional view showing one example of amethod of manufacturing a GaN-based film according to the presentinvention, (A) showing the step of preparing a composite substrate, (B)showing the step of forming a GaN-based film, and (C) showing the stepof removing a support substrate.

FIG. 3 is a schematic cross-sectional view showing one example of thestep of preparing a composite substrate according to the presentinvention.

DESCRIPTION OF EMBODIMENTS

[Composite Substrate]

Referring to FIG. 1, a composite substrate 10 representing oneembodiment of the present invention includes a support substrate 11dissoluble in hydrofluoric acid and a single crystal film 13 arranged ona side of a main surface 11 m of support substrate 11, a coefficient ofthermal expansion in main surface 11 m of support substrate 11 beingmore than 0.8 time and less than 1.2 times as high as a coefficient ofthermal expansion of GaN crystal.

Since composite substrate 10 in the present embodiment has a coefficientof thermal expansion in main surface 11 m of support substrate 11 morethan 0.8 time and less than 1.2 times as high as a coefficient ofthermal expansion of GaN crystal, a GaN-based film low in dislocationdensity and excellent in crystallinity can be formed on a main surface13 m of single crystal film 13 formed on main surface 11 m of supportsubstrate 11, in spite of a large area of main surface 13 m. Inaddition, since support substrate 11 is dissoluble in hydrofluoric acid,by removing support substrate 11 with hydrofluoric acid after aGaN-based film is formed on main surface 13 m of single crystal film 13of composite substrate 10, a GaN-based film low in dislocation densityand excellent in crystallinity that is formed on main surface 13 m ofsingle crystal film 13 can efficiently be obtained.

(Support Substrate)

With regard to support substrate 11 of composite substrate 10 in thepresent embodiment, from a point of view of formation of a GaN-basedfilm having a large main surface area, low dislocation density, and goodcrystallinity on main surface 13 m of single crystal film 13 m formed onmain surface 11 m of support substrate 11, a coefficient of thermalexpansion in main surface 11 m of support substrate 11 should be morethan 0.8 time and less than 1.2 times, preferably more than 0.9 time andless than 1.15 times, and further preferably more than 0.95 time andless than 1.1 times as high as a coefficient of thermal expansion of GaNcrystal. In addition, from a point of view of efficient removal of thesupport substrate from the formed GaN-based film, support substrate 11should be dissoluble in hydrofluoric acid.

Here, since GaN crystal has wurtzite-type hexagonal crystal structure,it has a coefficient of thermal expansion in a direction of an a axisand a coefficient of thermal expansion in a direction of a c axisdifferent from each other. In order to lessen warpage of the compositesubstrate and the GaN-based film formed on the main surface thereof, thecoefficient of thermal expansion in the main surface of the supportsubstrate should be the same as or close to the coefficient of thermalexpansion in the main surface of the formed GaN-based film. Therefore,the coefficient of thermal expansion of GaN crystal to be compared withthe coefficient of thermal expansion of the support substrate is acoefficient of thermal expansion of the GaN crystal in the direction ofthe a axis in a case where the main surface of the formed GaN-based filmis perpendicular to the c axis, and it is a coefficient of thermalexpansion of the GaN crystal in the direction of the c axis in a casewhere the main surface of the formed GaN-based film is perpendicular tothe a axis. Since the main surface of the single crystal film of thecomposite substrate is normally perpendicular to the direction of the caxis, the main surface of the formed GaN-based film is perpendicular tothe direction of the c axis and hence the coefficient of thermalexpansion in the main surface of the support substrate is compared withthe coefficient of thermal expansion of the GaN crystal in the directionof the a axis.

Support substrate 11 is not particularly restricted so long as acoefficient of thermal expansion in main surface 11 m of supportsubstrate 11 is more than 0.8 time and less than 1.2 times as high as acoefficient of thermal expansion of GaN crystal and the supportsubstrate is dissoluble in hydrofluoric acid, and it may bemonocrystalline, polycrystalline, or non-crystalline. From a point ofview of ease in adjustment of a coefficient of thermal expansion andsolution in hydrofluoric acid, support substrate 11 preferably containsat least any of a metal oxide and a silicon oxide.

Further, from a point of view of ease in adjustment of a coefficient ofthermal expansion and ease in obtaining a coefficient of thermalexpansion within the range above by varying a type and a ratio of sourcematerials therefor, support substrate 11 is more preferably made of asintered body containing at least any of a metal oxide and a siliconoxide. For example, an Al₂O₃—SiO₂-based sintered body, an MgO—SiO₂-basedsintered body, a ZrO₂—SiO₂-based sintered body, aY₂O₃—ZrO₂—MgO—SiO₂-based sintered body, or the like is furtherpreferred.

Here, support substrate 11 particularly preferably contains at least anyof zirconia and silica and a ZrO₂—SiO₂ composite oxide formed ofzirconia (ZrO₂) and silica (SiO₂). Here, the ZrO₂—SiO₂ composite oxiderefers to a composite oxide such as zircon (ZrSiO₄) formed of ZrO₂ andSiO₂. Such a ZrO₂—SiO₂ composite oxide is not dissolved or less likelyto be dissolved in hydrofluoric acid. Therefore, from a point of view ofsolution in hydrofluoric acid, support substrate 11 contains at leastany of zirconia (ZrO₂) and silica (SiO₂), in addition to the ZrO₂—SiO₂composite oxide. Presence of ZrO₂, SiO₂ and a composite oxide such asZrSiO₄ as well as a composition ratio thereof can be determined throughX-ray diffraction.

Support substrate 11 containing at least any of zirconia (ZrO₂) andsilica (SiO₂) and a ZrO₂—SiO₂ composite oxide (for example, ZrSiO₄) asabove is obtained by causing complete or incomplete reaction betweenZrO₂ and SiO₂ at a molar ratio other than 1:1 or by causing incompletereaction between ZrO₂ and SiO₂ at a molar ratio of 1:1.

Alternatively, support substrate 11 particularly preferably containsyttria stabilized zirconia (Y₂O₃ stabilized ZrO, hereinafter alsoreferred to as YSZ) and an Al₂O₃—SiO₂ composite oxide formed of alumina(Al₂O₃) and silica (SiO₂). Support substrate 11 containing theAl₂O₃—SiO₂ composite oxide and YSZ (yttria stabilized zirconia) isdissoluble in hydrofluoric acid and it allows growth of a GaN-based filmexcellent in crystallinity on single crystal film 13 arranged on themain surface side of support substrate 11 of composite substrate 10.Here, the Al₂O₃—SiO₂ composite oxide is not particularly restricted, andmullite (3Al₂O₃.2SiO₂ to 2Al₂O₃.SiO₂ or Al₆O₁₃Si₂) or the like issuitable.

From a point of view of suppression of cracks generated in a GaN-basedfilm during growth of a GaN-based film excellent in crystallinity onsingle crystal film 13 on support substrate 11 containing an Al₂O₃—SiO₂composite oxide and YSZ (yttria stabilized zirconia), a content of YSZto the total of the Al₂O₃—SiO₂ composite oxide and YSZ is preferably notlower than 20 mass % and not higher than 40 mass % and more preferablynot lower than 25 mass % and not higher than 35 mass %. Further, from apoint of view the same as above, a content of yttria (Y₂O₃) to YSZ ispreferably not lower than 5 mol % and more preferably not lower than 6mol % and not higher than 50 mol %.

Here, since coefficients of thermal expansion of support substrate 11and GaN crystal generally greatly fluctuate depending on temperaturesthereof, it is important to make determination depending on acoefficient of thermal expansion at any temperature or in anytemperature region. An object of the present invention is to manufacturea GaN-based film less in warpage on a composite substrate, and it isconsidered as proper to handle an average coefficient of thermalexpansion of each of a support substrate and GaN crystal from a roomtemperature to a film formation temperature for a GaN-based film as acoefficient of thermal expansion of each of the support substrate andthe GaN crystal, because a GaN-based film is formed on a compositesubstrate at a film formation temperature for a GaN-based film increasedfrom a room temperature, thereafter a temperature is lowered to the roomtemperature, and then the GaN-based film formed on the compositesubstrate is taken. Even in an inert gas atmosphere, however, GaNcrystal is decomposed when a temperature exceeds 800° C. Therefore, inthe present invention, it is assumed that coefficients of thermalexpansion of the support substrate and the GaN crystal are determined byan average coefficient of thermal expansion from a room temperature(specifically 25° C.) to 800° C.

(Single Crystal Film)

From a point of view of growth of a GaN-based film having less warpage,low dislocation density, and good crystallinity, single crystal film 13arranged on the main surface 11 m side of support substrate 11 ofcomposite substrate 10 in the present embodiment preferably hashexagonal crystal structure similarly to GaN crystal, and a sapphirefilm having a (0001) plane as main surface 13 m, an SiC film having a(0001) plane as main surface 13 m, a GaN film having a (0001) plane asmain surface 13 m, and the like are preferred. In a case where aGaN-based film having a main surface perpendicular to the c axis is tobe formed, the single crystal film preferably has three-fold symmetrywith respect to an axis perpendicular to the main surface thereof, andan Si film having a (111) plane as main surface 13 m and a GaAs filmhaving a (111) plane as main surface 13 m in addition to the sapphirefilm, the SiC film, and the GaN-based film above are also suitable.

Further, though an area of main surface 13 m of single crystal film 13in composite substrate 10 is not particularly restricted, from a pointof view of growth of a GaN-based film having a large main surface area,the area is preferably not smaller than 15 cm².

(Adhesive Layer)

From a point of view of improved joint strength between supportsubstrate 11 and single crystal film 13, composite substrate 10 in thepresent embodiment preferably has an adhesive layer 12 formed betweensupport substrate 11 and single crystal film 13. Though adhesive layer12 is not particularly restricted, from a point of view of a high effectof improvement in joint strength between support substrate 11 and singlecrystal film 13, an SiO₂ layer, a TiO₂ layer, or the like is preferred.Further, from a point of view of removal with hydrofluoric acid, theSiO₂ layer is further preferred.

(Method of Manufacturing Composite Substrate)

A method of manufacturing a composite substrate is the same as the stepof preparing a composite substrate in a method of manufacturing aGaN-based film which will be described later.

[Method of Manufacturing GaN-Based Film]

Referring to FIG. 2, a method of manufacturing a GaN-based filmaccording to another embodiment of the present invention includes thesteps of preparing composite substrate 10 including support substrate 11dissoluble in hydrofluoric acid and single crystal film 13 arranged onthe main surface 11 m side of support substrate 11, a coefficient ofthermal expansion in main surface 11 m of support substrate 11 beingmore than 0.8 time and less than 1.2 times as high as a coefficient ofthermal expansion of GaN crystal (FIG. 2(A)), forming a GaN-based film20 on main surface 13 m of single crystal film 13 arranged on the mainsurface 11 m side of support substrate 11 (FIG. 2(B)), and removingsupport substrate 11 by dissolving the same in hydrofluoric acid (FIG.2(C)). Here, GaN-based film 20 refers to a film formed of a group IIInitride containing Ga as a group III element and it is exemplified, forexample, by a Ga_(x)In_(y)Al_(1-x-y)N film (x>0, y≧0, x+y≦1).

According to the method of manufacturing a GaN-based film in the presentembodiment, by employing composite substrate 10 including supportsubstrate 11 dissoluble in hydrofluoric acid and single crystal film 13arranged on the main surface 11 m side of support substrate 11, acoefficient of thermal expansion in main surface 11 m of supportsubstrate 11 being more than 0.8 time and less than 1.2 times as high asa coefficient of thermal expansion of GaN crystal, forming GaN-basedfilm 20 on main surface 13 m of single crystal film 13 of compositesubstrate 10, and thereafter removing support substrate 11 of compositesubstrate 10 by dissolving the same in hydrofluoric acid, GaN-based film20 having a large main surface area, less warpage, and goodcrystallinity can efficiently be obtained.

(Step of Preparing Composite Substrate)

Referring to FIG. 2(A), the method of manufacturing a GaN-based film inthe present embodiment initially includes the step of preparingcomposite substrate 10 including support substrate 11 dissoluble inhydrofluoric acid and single crystal film 13 arranged on the mainsurface 11 m side of support substrate 11, a coefficient of thermalexpansion in main surface 11 m of support substrate 11 being more than0.8 time and less than 1.2 times as high as a coefficient of thermalexpansion of GaN crystal.

Since composite substrate 10 above includes support substrate 11 andsingle crystal film 13, a coefficient of thermal expansion in mainsurface 11 m of support substrate 11 being more than 0.8 time and lessthan 1.2 times as high as a coefficient of thermal expansion of GaNcrystal, a GaN-based film having a large main surface area, lesswarpage, and good crystallinity can be formed on main surface 13 m ofsingle crystal film 13. In addition, in composite substrate 10 above,since support substrate 11 is dissoluble in hydrofluoric acid, aGaN-based film having a large main surface area, less warpage, and goodcrystallinity can efficiently be taken by removing support substrate 11.

In addition, a method of arranging single crystal film 13 on the mainsurface 11 m side of support substrate 11 of composite substrate 10 isnot particularly restricted, and exemplary methods include a method ofgrowing single crystal film 13 on main surface 11 m of support substrate11 (a first method), a method of bonding single crystal film 13 formedon a main surface of an underlying substrate to main surface 11 m ofsupport substrate 11 and thereafter removing the underlying substrate (asecond method), a method of bonding single crystal (not shown) to mainsurface 11 m of support substrate 11 and thereafter separating thesingle crystal at a plane at a prescribed depth from a bonding surfaceto thereby form single crystal film 13 on main surface 11 m of supportsubstrate 11 (a third method), and the like. In a case where a supportsubstrate is made of a polycrystalline sintered body, the first methodabove is difficult and hence any of the second and third methods aboveis preferably employed. A method of bonding single crystal film 13 tosupport substrate 11 in the second method above is not particularlyrestricted, and exemplary methods include a method of directly bondingsingle crystal film 13 to main surface 11 m of support substrate 11, amethod of bonding single crystal film 13 to main surface 11 m of supportsubstrate 11 with adhesive layer 12 being interposed, and the like. Amethod of bonding single crystal to support substrate 11 in the thirdmethod above is not particularly restricted, and exemplary methodsinclude a method of directly bonding single crystal to main surface 11 mof support substrate 11, a method of bonding single crystal to mainsurface 11 m of support substrate 11 with adhesive layer 12 beinginterposed, and the like.

The step of preparing composite substrate 10 above is not particularlyrestricted. From a point of view of efficient preparation of compositesubstrate 10 of high quality, however, for example, referring to FIG. 3,the second method above can include sub steps of preparing supportsubstrate 11 (FIG. 3(A)), forming single crystal film 13 on a mainsurface 30 n of an underlying substrate 30 (FIG. 3(B)), bonding supportsubstrate 11 and single crystal film 13 to each other (FIG. 3(C)), andremoving underlying substrate 30 (FIG. 3(D)).

In FIG. 3(C), in the sub step of bonding support substrate 11 and singlecrystal film 13 to each other, an adhesive layer 12 a is formed on mainsurface 11 m of support substrate 11 (FIG. 3(C1)), an adhesive layer 12b is formed on a main surface 13 n of single crystal film 13 grown onmain surface 30 n of underlying substrate 30 (FIG. 3(C2)), thereafter amain surface 12 am of adhesive layer 12 a formed on support substrate 11and a main surface 12 bn of adhesive layer 12 b formed on single crystalfilm 13 formed on underlying substrate 30 are bonded to each other, andthus support substrate 11 and single crystal film 13 are bonded to eachother with adhesive layer 12 formed by joint between adhesive layer 12 aand adhesive layer 12 b being interposed (FIG. 3(C3)). If supportsubstrate 11 and single crystal film 13 can be joined to each other,however, support substrate 11 and single crystal film 13 can directly bebonded to each other without adhesive layer 12 being interposed.

A specific technique for bonding support substrate 11 and single crystalfilm 13 to each other is not particularly restricted. From a point ofview of ability to hold joint strength even at a high temperature afterbonding, however, a direct joint method of washing a bonding surface,performing bonding, and thereafter increasing a temperature to about600° C. to 1200° C. for joint, a surface activation method of washing abonding surface, activating the bonding surface with plasma, ions or thelike, and thereafter performing joint at a low temperature from around aroom temperature (for example, 25° C.) to 400° C., and the like arepreferably employed.

Since a material and a physical property of support substrate 11, singlecrystal film 13, and adhesive layer 12 in composite substrate 10 thusobtained are as described above, description will not be repeated.

(Step of Forming GaN-Based Film)

Referring to FIG. 2(B), the method of manufacturing a GaN-based film inthe present embodiment then includes the step of forming GaN-based film20 on main surface 13 m of single crystal film 13 in composite substrate10.

Composite substrate 10 prepared in the step of preparing a compositesubstrate above includes support substrate 11 in which a coefficient ofthermal expansion in main surface 11 m of support substrate 11 is morethan 0.8 time and less than 1.2 times as high as a coefficient ofthermal expansion of GaN crystal, and single crystal film 13. Therefore,GaN-based film 20 having a large area of a main surface 20 m, lesswarpage, and good crystallinity can be formed on main surface 13 m ofsingle crystal film 13.

Though a method of forming GaN-based film 20 is not particularlyrestricted, from a point of view of forming a GaN-based film low indislocation density, a vapor phase epitaxy method such as an MOCVD(Metal Organic Chemical Vapor Deposition) method, an HVPE (Hydride VaporPhase Epitaxy) method, an MBE (Molecular Beam Epitaxy) method, and asublimation method, a liquid phase epitaxy method such as a flux methodand a high nitrogen pressure solution method, and the like arepreferably exemplified.

The step of forming GaN-based film 20 is not particularly restricted.From a point of view of forming a GaN-based film low in dislocationdensity, however, the step preferably includes sub steps of forming aGaN-based buffer layer 21 on main surface 13 m of single crystal film 13of composite substrate 10 and forming a GaN-based single crystal layer23 on a main surface 21 m of GaN-based buffer layer 21. Here, GaN-basedbuffer layer 21 refers to a layer low in crystallinity ornon-crystalline, that is a part of GaN-based film 20 and grown at atemperature lower than a growth temperature of GaN-based single crystallayer 23 which is another part of GaN-based film 20.

By forming GaN-based buffer layer 21, unmatch in lattice constantbetween single crystal film 13 and GaN-based single crystal layer 23formed on GaN-based buffer layer 21 is mitigated, and hencecrystallinity of GaN-based single crystal layer 23 improves anddislocation density thereof is lowered. Consequently, crystallinity ofGaN-based film 20 improves and dislocation density thereof is lowered.

GaN-based single crystal layer 23 can also be grown as GaN-based film 20on single crystal film 13, without growing GaN-based buffer layer 21.Such a method is suitable for a case where unmatch in lattice constantbetween single crystal film 13 and GaN-based film 20 formed thereon isless.

(Step of Removing Support Substrate)

Referring to FIG. 2(C), the method of manufacturing a GaN-based film inthe present embodiment then includes the step of removing supportsubstrate 11 by dissolving the same in hydrofluoric acid.

In composite substrate 10 prepared in the step of preparing a compositesubstrate above, since support substrate 11 is dissoluble inhydrofluoric acid, by removing support substrate 11 by dissolving thesame in hydrofluoric acid, GaN-based film 20 having a large area of mainsurface 20 m, less warpage, and good crystallinity formed on mainsurface 13 m of single crystal film 13 is obtained. Here, in a casewhere single crystal film 13 is formed from a GaN-based single crystalfilm such as a GaN single crystal film, a GaN-based film formed of aGaN-based material in its entirety is obtained.

EXAMPLES Example 1 1. Measurement of Coefficient of Thermal Expansion ofGaN Crystal

A sample for evaluation having a size of 2×2×20 mm (having the a axis ina longitudinal direction and having any of a c plane and an m plane as aplane in parallel to the longitudinal direction, with accuracy in planeorientation being within ±0.1°) was cut from GaN single crystal grownwith the HVPE method and having dislocation density of 1×10⁶ cm⁻², Siconcentration of 1×10¹⁸ cm⁻², oxygen concentration of 1×10¹⁷ cm⁻², andcarbon concentration of 1×10¹⁶ cm⁻².

An average coefficient of thermal expansion of the sample for evaluationabove when a temperature was increased from a room temperature (25° C.)to 800° C. was measured with TMA (thermomechanical analysis).Specifically, using TMA8310 manufactured by Rigaku Corporation, thecoefficient of thermal expansion of the sample for evaluation wasmeasured with differential dilatometry in an atmosphere in which anitrogen gas flows. An average coefficient of thermal expansion α_(GaN)from 25° C. to 800° C. of GaN crystal in the direction of the a axisobtained by such measurement was 5.84×10⁻⁶/° C.

2. Step of Preparing Composite Substrate

(1) Sub Step of Preparing Support Substrate

Referring to FIG. 3(A), 13 types of ZrO₂—SiO₂-based sintered bodies A toM were prepared by sintering a mixture of ZrO₂ and SiO₂ at a prescribedmolar ratio as a material for support substrate 11 at a pressure of 50MPa in a direction of one axis in an argon gas atmosphere at 1700° C.for 1 hour. As a result of confirmation with X-ray diffraction, in eachof these 13 types of ZrO₂—SiO₂-based sintered bodies A to M, ZrSiO₄,ZrO₂, and SiO₂ were present. In addition, a sample for measurementhaving a size of 2×2×20 mm (having a direction substantially parallel tothe main surface of the support substrate cut from a sintered body asthe longitudinal direction) was cut from each of the 13 types ofZrO₂—SiO₂-based sintered bodies above. Here, since the ZrO₂—SiO₂-basedsintered body does not have directional specificity, any cuttingdirection was set. An average coefficient of thermal expansion α_(S) ofeach of these samples for measurement when a temperature was increasedfrom a room temperature (25° C.) to 800° C. was measured as describedabove.

ZrO₂—SiO₂-based sintered body A had a molar ratio between ZrO₂ and SiO₂of 82:18, and attained average coefficient of thermal expansion α_(S)from 25° C. to 800° C. (hereinafter simply referred to as averagecoefficient of thermal expansion α_(S)) of 4.25×10⁻⁶/° C. and a ratio ofaverage coefficient of thermal expansion α_(S) of the sintered body toaverage coefficient of thermal expansion α_(GaN) of the GaN crystal inthe direction of the a axis (hereinafter denoted as an α_(S)/α_(GaN)ratio) was 0.728. ZrO₂—SiO₂-based sintered body B had a molar ratiobetween ZrO₂ and SiO₂ of 77:23, and attained average coefficient ofthermal expansion α_(S) of 4.75×10⁻⁶/° C. and the α_(S)/α_(GaN) ratio of0.813. ZrO₂—SiO₂-based sintered body C had a molar ratio between ZrO₂and SiO₂ of 71:29, and attained average coefficient of thermal expansionα_(S) of 5.00×10⁻⁶/° C. and the α_(S)/α_(GaN) ratio of 0.856.ZrO₂—SiO₂-based sintered body D had a molar ratio between ZrO₂ and SiO₂of 69:31, and attained average coefficient of thermal expansion α_(S) of5.20×10⁻⁶/° C. and the α_(S)/α_(GaN) ratio of 0.890. ZrO₂—SiO₂-basedsintered body E had a molar ratio between ZrO₂ and SiO₂ of 66:34, andattained average coefficient of thermal expansion α_(S) of 5.40×10⁻⁶/°C. and the α_(S)/α_(GaN) ratio of 0.925. ZrO₂—SiO₂-based sintered body Fhad a molar ratio between ZrO₂ and SiO₂ of 63:37, and attained averagecoefficient of thermal expansion α_(S) of 5.60×10⁻⁶/° C. and theα_(S)/α_(GaN) ratio of 0.959. ZrO₂—SiO₂-based sintered body G had amolar ratio between ZrO₂ and SiO₂ of 58:42, and attained averagecoefficient of thermal expansion α_(S) of 5.80×10⁻⁶/° C. and theα_(S)/α_(GaN) ratio of 0.993. ZrO₂—SiO₂-based sintered body H had amolar ratio between ZrO₂ and SiO₂ of 57:43, and attained averagecoefficient of thermal expansion α_(S) of 6.00×10⁻⁶/° C. and theα_(S)/α_(GaN) ratio of 1.027. ZrO₂—SiO₂-based sintered body I had amolar ratio between ZrO₂ and SiO₂ of 53:47, and attained averagecoefficient of thermal expansion α_(S) of 6.33×10⁻⁶/° C. and theα_(S)/α_(GaN) ratio of 1.084. ZrO₂—SiO₂-based sintered body J had amolar ratio between ZrO₂ and SiO₂ of 46:54, and attained averagecoefficient of thermal expansion α_(S) of 6.67×10⁻⁶/° C. and theα_(S)/α_(GaN) ratio of 1.142. ZrO₂—SiO₂-based sintered body K had amolar ratio between ZrO₂ and SiO₂ of 42:58, and attained averagecoefficient of thermal expansion α_(S) of 7.00×10⁻⁶/° C. and theα_(S)/α_(GaN) ratio of 1.199. ZrO₂—SiO₂-based sintered body L had amolar ratio between ZrO₂ and SiO₂ of 38:62, and attained averagecoefficient of thermal expansion α_(S) of 7.25×10⁻⁶/° C. and theα_(S)/α_(GaN) ratio of 1.241. ZrO₂—SiO₂-based sintered body M had amolar ratio between ZrO₂ and SiO₂ of 35:65, and attained averagecoefficient of thermal expansion α_(S) of 7.50×10⁻⁶/° C. and theα_(S)/α_(GaN) ratio of 1.284.

A support substrate having a diameter of 4 inches (101.6 mm) and athickness of 1 mm was cut from each of 13 types of ZrO₂—SiO₂-basedsintered bodies A to M above, and opposing main surfaces of each supportsubstrate were mirror-polished to thereby obtain 13 types of supportsubstrates A to M. Namely, an average coefficient of thermal expansionof each of 13 types of support substrates A to M from 25° C. to 800° C.was equal to an average coefficient of thermal expansion of eachcorresponding one of 13 types of ZrO₂—SiO₂-based sintered bodies A to Mfrom 25° C. to 800° C. Table 1 summarizes the results.

(2) Sub Step of Forming Single Crystal Film on Underlying Substrate

Referring to FIG. 3(B), an Si substrate having a mirror-polished (111)plane as main surface 30 n and having a diameter of 5 inches (127 mm)and a thickness of 0.5 mm was prepared as underlying substrate 30.

A GaN film having a thickness of 0.4 μm was formed as single crystalfilm 13 on main surface 30 n of the Si substrate (underlying substrate30) above with an MOCVD method. Regarding film formation conditions, aTMG gas and an NH₃ gas were used as source gases, an H₂ gas was used asa carrier gas, a film formation temperature was set to 1000° C., and afilm formation pressure was set to 1 atmosphere. Main surface 13 m ofthe GaN film (single crystal film 13) thus obtained had a planeorientation having an off angle within ±1° with respect to the (0001)plane.

(3) Sub Step of Bonding Support Substrate and Single Crystal Film toEach Other

Referring to (C1) in FIG. 3(C), an SiO₂ film having a thickness of 2 μmwas formed on main surface 11 m of each of support substrates A to M(support substrate 11) in FIG. 3(A) with a CVD (chemical vapordeposition) method. Then, by polishing the SiO₂ film having a thicknessof 2 μm on main surface 11 m of each of support substrates A to M(support substrate 11) with CeO₂ slurry, only an SiO₂ layer having athickness of 0.2 μm was allowed to remain to serve as adhesive layer 12a. Thus, pores in main surface 11 m of each of support substrates A to M(support substrate 11) were buried to thereby obtain the SiO₂ layer(adhesive layer 12 a) having flat main surface 12 am and a thickness of0.2 μm.

Referring also to (C2) in FIG. 3(C), an SiO₂ film having a thickness of2 μm was formed on main surface 13 n of the GaN film (single crystalfilm 13) formed on the Si substrate (underlying substrate 30) in FIG.3(B) with the CVD method. Then, by polishing this SiO₂ film having athickness of 2 μm with CeO₂ slurry, only an SiO₂ layer having athickness of 0.2 μm was allowed to remain to serve as adhesive layer 12b.

Referring next to (C3) in FIG. 3(C), main surface 12 am of the SiO₂layer (adhesive layer 12 a) formed on each of support substrates A to M(support substrate 11) and main surface 12 bn of the SiO₂ layer(adhesive layer 12 b) formed on the GaN film (single crystal film 13)formed on the Si substrate (underlying substrate 30) were cleaned andactivated by argon plasma, and thereafter main surface 12 am of the SiO₂layer (adhesive layer 12 a) and main surface 12 bn of the SiO₂ layer(adhesive layer 12 b) were bonded to each other, followed by heattreatment for 2 hours in a nitrogen atmosphere at 300° C.

(4) Sub Step of Removing Underlying Substrate

Referring to FIG. 3(D), a main surface on a back side (a side wheresingle crystal film 13 was not bonded) and a side surface of each ofsupport substrates A to M (support substrate 11) were covered andprotected with wax 40, and thereafter the Si substrate (underlyingsubstrate 30) was removed by etching using a mixed acid aqueous solutionof 10 mass % of hydrofluoric acid and 5 mass % of nitric acid. Thus,composite substrates A to M (composite substrate 10) in which GaN films(single crystal films 13) were arranged on the main surface 11 m sidesof support substrates A to M (support substrates 11) respectively wereobtained.

3. Step of Forming GaN-Based Film

Referring to FIG. 2(B), a GaN film (GaN-based film 20) was formed withthe MOCVD method on main surface 13 m (such a main surface being a(0001) plane) of the GaN film (single crystal film 13) of each ofcomposite substrates A to M (composite substrate 10) having a diameterof 4 inches (101.6 mm) obtained above and on a main surface of asapphire substrate having a diameter of 4 inches (101.6 mm) and athickness of 1 mm (such a main surface being a (0001) plane). In formingthe GaN film (GaN-based film 20), a TMG (trimethylgallium) gas and anNH₃ gas were used as source gases, an H₂ gas was used as a carrier gas,and a GaN buffer layer (GaN-based buffer layer 21) was grown to athickness of 0.1 μm at 500° C. and then a GaN single crystal layer(GaN-based single crystal layer 23) was grown to a thickness of 5 μm at1050° C. Here, a rate of growth of the GaN single crystal layer was 1μm/hr. Thereafter, wafers A to M and R in which GaN films were formed oncomposite substrates A to M and the sapphire substrate respectively werecooled to a room temperature (25° C.) at a rate of 10° C./min.

Regarding wafers A to M and R taken out of a film formation apparatusafter cooling to a room temperature, warpage of the wafer and crackcount and dislocation density of the GaN film were determined. Here, ashape of warpage and an amount of warpage of the wafer were determinedbased on interference fringes observed at the main surface of the GaNfilm with FM200EWafer of Corning Tropel. Regarding crack count in theGaN film, the number of cracks per unit length was counted with aNomarski microscope, and evaluation as “extremely few”, “few”, “many”,and “extremely many” was made when the count was smaller than 1count/mm, when the count was not smaller than 1 count/mm and smallerthan 5 counts/mm, when the count was not smaller than 5 counts/mm andsmaller than 10 counts/mm, and when the count was not smaller than 10counts/mm, respectively. Dislocation density of the GaN film wasmeasured with CL (cathode luminescence) based on the number of darkpoints per unit area. It is noted that cracks generated in the GaN filmin the present Example were small without penetrating the film.

Wafer A warped on the GaN film side in a recessed manner, an amount ofwarpage was 680 μm, and cracks counted in the GaN film were extremelymany. Wafer B warped on the GaN film side in a recessed manner, anamount of warpage was 630 μm, cracks counted in the GaN film were few,and dislocation density of the GaN film was 4×10⁸ cm⁻². Wafer C warpedon the GaN film side in a recessed manner, an amount of warpage was 500μm, cracks counted in the GaN film were few, and dislocation density ofthe GaN film was 3×10⁸ cm⁻². Wafer D warped on the GaN film side in arecessed manner, an amount of warpage was 400 μm, cracks counted in theGaN film were few, and dislocation density of the GaN film was 2.5×10⁸cm⁻². Wafer E warped on the GaN film side in a recessed manner, anamount of warpage was 350 μm, cracks counted in the GaN film were few,and dislocation density of the GaN film was 2×10⁸ cm⁻². Wafer F warpedon the GaN film side in a recessed manner, an amount of warpage was 230μm, cracks counted in the GaN film were extremely few, and dislocationdensity of the GaN film was 1×10⁸ cm⁻². Wafer G warped on the GaN filmside in a recessed manner, an amount of warpage was 150 μm, crackscounted in the GaN film were extremely few, and dislocation density ofthe GaN film was 1×10⁸ cm⁻². Wafer H warped on the GaN film side in arecessed manner, an amount of warpage was 10 μm, cracks counted in theGaN film were extremely few, and dislocation density of the GaN film was1×10⁸ cm⁻². Wafer I warped on the GaN film side in a projecting manner,an amount of warpage was 15 μM, cracks counted in the GaN film wereextremely few, and dislocation density of the GaN film was 1×10⁸ cm⁻².Wafer J warped on the GaN film side in a projecting manner, an amount ofwarpage was 120 μm, cracks counted in the GaN film were few, anddislocation density of the GaN film was 2×10⁸ cm⁻². Wafer K warped onthe GaN film side in a projecting manner, an amount of warpage was 230cracks counted in the GaN film were few, and dislocation density of theGaN film was 3×10⁸ cm⁻². Wafer L warped on the GaN film side in aprojecting manner, an amount of warpage was 745 μm, cracks counted inthe GaN film were few, and dislocation density of the GaN film was 4×10⁸cm⁻². In wafer M, cracking occurred in the support substrate and asufficient GaN film was not obtained. Wafer R warped on the GaN filmside in a projecting manner, an amount of warpage was 750 μm, crackscounted in the GaN film were few, and dislocation density of the GaNfilm was 4×10⁸ cm⁻². Table 1 summarizes these results. In Table 1, “-”indicates that that physical property value was not measured.

4. Step of Removing Support Substrate

Referring to FIG. 2(C), wafers A to L obtained above were immersed in anaqueous solution of 10 mass % of hydrofluoric acid and supportsubstrates A to L (support substrate 11) and the SiO₂ layers weredissolved and removed. Thus, GaN films A to L (GaN-based film 20) formedon respective main surfaces 13 m of the GaN films (single crystal film13) were obtained. In GaN films A to L (GaN-based film 20) obtained byremoving support substrates A to L and the SiO₂ layers from wafers A toL as well, warpage was found in measurement based on interferencefringes observed with FM200EWafer of Corning Tropel, and an extent ofwarpage in GaN films A to L maintained an extent of warpage in wafers Ato L.

TABLE 1 Wafer A Wafer B Wafer C Wafer D Wafer E Wafer F Wafer GComposite Coefficient of 4.25 4.75 5.00 5.20 5.40 5.60 5.80 SubstrateThermal Expansion α_(S) (10⁻⁶/° C.) α_(S)/α_(GaN) Ratio 0.728 0.8130.856 0.890 0.925 0.959 0.993 Wafer Shape of Recess Recess Recess RecessRecess Recess Recess Warpage [GaN Film Side] Amount of 680 630 500 400350 230 150 Warpage [GaN Film] (μm) Cracks Extremely Few Few Few FewExtremely Extremely Counted in many few few GaN Film Dislocation — 4 32.5 2 1 1 Density of GaN Film (10⁸ cm⁻²) Notes Wafer H Wafer I Wafer JWafer K Wafer L Wafer M Wafer R Composite Coefficient of 6.00 6.33 6.677.00 7.25 7.50 — Substrate Thermal Expansion α_(S) (10⁻⁶/° C.)α_(S)/α_(GaN) Ratio 1.027 1.084 1.142 1.199 1.241 1.284 — Wafer Shape ofRecess Projection Projection Projection Projection — Projection Warpage[GaN Film Side] Amount of 10 15 120 230 745 — 750 Warpage [GaN Film](μm) Cracks Extremely Extremely Few Few Few — Few Counted in few few GaNFilm Dislocation 1 1 2 3 4 —  4 Density of GaN Film (10⁸ cm⁻²) NotesCrack in Support Substrate

Referring to Table 1, by employing a composite substrate (wafers B to K)having a support substrate in which coefficient of thermal expansionα_(S) in a main surface was more than 0.8 time and less than 1.2 times(that is, 0.8<(α_(S)/α_(GaN) ratio)<1.2) as high as coefficient ofthermal expansion α_(GaN) of GaN crystal, a GaN film less in warpage,low in dislocation density, and excellent in crystallinity could beformed. In addition, from a point of view of further decrease in warpageand dislocation density of the GaN film, coefficient of thermalexpansion α_(S) in a main surface of the support substrate of thecomposite substrate was preferably more than 0.9 time and less than 1.15times (that is, 0.9<(α_(S)/α_(GaN) ratio)<1.15) as high as coefficientof thermal expansion α_(GaN) of the GaN crystal (wafers E to J) andfurther preferably more than 0.95 time and less than 1.1 times (that is,0.95<(α_(S)/α_(GaN) ratio)<1.1) as high as coefficient of thermalexpansion α_(GaN) of the GaN crystal (wafers F to I).

Example 2 1. Measurement of Coefficient of Thermal Expansion of GaNCrystal

Measurement as in Example 1 was conducted and then average coefficientof thermal expansion α_(GaN) of the GaN crystal in the direction of thea axis from 25° C. to 800° C. was 5.84×10⁻⁶/° C.

2. Step of Preparing Composite Substrate

(1) Sub Step of Preparing Support Substrate

Referring to FIG. 3(A), 57 types of YSZ (yttria stabilizedzirconia)-mullite-based sintered bodies A0, B1 to B8, C1 to C8, D1 toD8, E1 to E8, F1 to F8, G1 to G8, and H1 to H8 as a material for supportsubstrate 11, manufactured with atmospheric-pressure sintering ofsintering at 1 atmosphere at 1700° C. for 10 hours and with HIP (hotisostatic pressing) of sintering at 2000 atmospheres at 1700° C. for 1hour, were subjected to X-ray diffraction, to confirm presence and aratio of Y₂O₃, ZrO₂, and mullite (3Al₂O₃.2SiO₂ to 2Al₂O₃.SiO₂,specifically Al₆O₁₃Si₂). In addition, a sample for measurement having asize of 2×2×20 mm (having a direction substantially parallel to the mainsurface of the support substrate cut from a sintered body as thelongitudinal direction) was cut from each of the 57 types of theYSZ-mullite-based sintered bodies above. Here, since theYSZ-mullite-based sintered body does not have directional specificity,any cutting direction was set. Average coefficient of thermal expansionα_(S) of each of these samples for measurement when a temperature wasincreased from a room temperature (25° C.) to 800° C. was measured asdescribed above.

YSZ-mullite-based sintered body A0 had a content of YSZ to the total ofYSZ and mullite (hereinafter referred to as a YSZ content) of 0 mass %,average coefficient of thermal expansion α_(S) from 25° C. to 800° C.(hereinafter simply referred to as average coefficient of thermalexpansion α_(S)) thereof was not measured, and a ratio of averagecoefficient of thermal expansion α_(S) of the sintered body to averagecoefficient of thermal expansion α_(GaN) of the GaN crystal in thedirection of the a axis (hereinafter denoted as the α_(S)/α_(GaN) ratio)was not calculated.

YSZ-mullite-based sintered body B1 had a YSZ content of 20 mass %, acontent of Y₂O₃ (yttria) to YSZ (hereinafter referred to as a Y₂O₃content) of 0 mol %, average coefficient of thermal expansion α_(S) of4.40×10⁻⁶/° C., and the α_(S)/α_(GaN) ratio of 0.753. YSZ-mullite-basedsintered body B2 had a YSZ content of 20 mass %, a Y₂O₃ content of 3 mol%, average coefficient of thermal expansion α_(S) of 4.58×10⁻⁶/° C., andthe α_(S)/α_(GaN) ratio of 0.784. YSZ-mullite-based sintered body B3 hada YSZ content of 20 mass %, a Y₂O₃ content of 5 mol %, averagecoefficient of thermal expansion α_(S) of 4.68×10⁻⁶/° C., and theα_(S)/α_(GaN) ratio of 0.801. YSZ-mullite-based sintered body B4 had aYSZ content of 20 mass %, a Y₂O₃ content of 6 mol %, average coefficientof thermal expansion α_(S) of 4.69×10⁻⁶/° C., and the α_(S)/α_(GaN)ratio of 0.803. YSZ-mullite-based sintered body B5 had a YSZ content of20 mass %, a Y₂O₃ content of 10 mol %, average coefficient of thermalexpansion α_(S) of 4.72×10⁻⁶/° C., and the α_(S)/α_(GaN) ratio of 0.808.YSZ-mullite-based sintered body B6 had a YSZ content of 20 mass %, aY₂O₃ content of 20 mol %, average coefficient of thermal expansion α_(S)of 4.81×10⁻⁶/° C., and the α_(S)/α_(GaN) ratio of 0.823.YSZ-mullite-based sintered body B7 had a YSZ content of 20 mass %, aY₂O₃ content of 50 mol %, average coefficient of thermal expansion α_(S)of 5.06×10⁻⁶/° C., and the α_(S)/α_(GaN) ratio of 0.866.YSZ-mullite-based sintered body B8 had a YSZ content of 20 mass %, aY₂O₃ content of 100 mol %, average coefficient of thermal expansionα_(S) was not measured, and the α_(S)/α_(GaN) ratio was not calculated.

YSZ-mullite-based sintered body C1 had a YSZ content of 25 mass %, aY₂O₃ content of 0 mol %, average coefficient of thermal expansion α_(S)of 4.48×10⁻⁶/° C., and the α_(S)/α_(GaN) ratio of 0.767.YSZ-mullite-based sintered body C2 had a YSZ content of 25 mass %, aY₂O₃ content of 3 mol %, average coefficient of thermal expansion α_(S)of 4.62×10⁻⁶/° C., and the α_(S)/α_(GaN) ratio of 0.791.YSZ-mullite-based sintered body C3 had a YSZ content of 25 mass %, aY₂O₃ content of 5 mol %, average coefficient of thermal expansion α_(S)of 5.26×10⁻⁶/° C., and the α_(S)/α_(GaN) ratio of 0.901.YSZ-mullite-based sintered body C4 had a YSZ content of 25 mass %, aY₂O₃ content of 6 mol %, average coefficient of thermal expansion α_(S)of 5.27×10⁻⁶/° C., and the α_(S)/α_(GaN) ratio of 0.903.YSZ-mullite-based sintered body C5 had a YSZ content of 25 mass %, aY₂O₃ content of 10 mol %, average coefficient of thermal expansion α_(S)of 5.31×10⁻⁶/° C., and the α_(S)/α_(GaN) ratio of 0.909.YSZ-mullite-based sintered body C6 had a YSZ content of 25 mass %, aY₂O₃ content of 20 mol %, average coefficient of thermal expansion α_(S)of 5.40×10⁻⁶/° C., and the α_(S)/α_(GaN) ratio of 0.925.YSZ-mullite-based sintered body C7 had a YSZ content of 25 mass %, aY₂O₃ content of 50 mol %, average coefficient of thermal expansion α_(S)of 5.69×10⁻⁶/° C., and the α_(S)/α_(GaN) ratio of 0.974.YSZ-mullite-based sintered body C8 had a YSZ content of 25 mass %, aY₂O₃ content of 100 mol %, average coefficient of thermal expansionα_(S) was not measured, and the α_(S)/α_(GaN) ratio was not calculated.

YSZ-mullite-based sintered body D1 had a YSZ content of 30 mass %, aY₂O₃ content of 0 mol %, average coefficient of thermal expansion α_(S)of 4.56×10⁻⁶/° C., and the α_(S)/α_(GaN) ratio of 0.781.YSZ-mullite-based sintered body D2 had a YSZ content of 30 mass %, aY₂O₃ content of 3 mol %, average coefficient of thermal expansion α_(S)of 4.65×10⁻⁶/° C., and the α_(S)/α_(GaN) ratio of 0.796.YSZ-mullite-based sintered body D3 had a YSZ content of 30 mass %, aY₂O₃ content of 5 mol %, average coefficient of thermal expansion α_(S)of 5.55×10⁻⁶/° C., and the α_(S)/α_(GaN) ratio of 0.950.YSZ-mullite-based sintered body D4 had a YSZ content of 30 mass %, aY₂O₃ content of 6 mol %, average coefficient of thermal expansion α_(S)of 5.56×10⁻⁶/° C., and the α_(S)/α_(GaN) ratio of 0.952.YSZ-mullite-based sintered body D5 had a YSZ content of 30 mass %, aY₂O₃ content of 10 mol %, average coefficient of thermal expansion α_(S)of 5.60×10⁻⁶/° C., and the α_(S)/α_(GaN) ratio of 0.959.YSZ-mullite-based sintered body D6 had a YSZ content of 30 mass %, aY₂O₃ content of 20 mol %, average coefficient of thermal expansion α_(S)of 5.70×10⁻⁶/° C., and the α_(S)/α_(GaN) ratio of 0.976.YSZ-mullite-based sintered body D7 had a YSZ content of 30 mass %, aY₂O₃ content of 50 mol %, average coefficient of thermal expansion α_(S)of 6.00×10⁻⁶/° C., and the α_(S)/α_(GaN) ratio of 1.027.YSZ-mullite-based sintered body D8 had a YSZ content of 30 mass %, aY₂O₃ content of 100 mol %, average coefficient of thermal expansionα_(S) was not measured, and the α_(S)/α_(GaN) ratio was not calculated.

YSZ-mullite-based sintered body E1 had a YSZ content of 35 mass %, aY₂O₃ content of 0 mol %, average coefficient of thermal expansion α_(S)of 4.77×10⁻⁶/° C., and the α_(S)/α_(GaN) ratio of 0.816.YSZ-mullite-based sintered body E2 had a YSZ content of 35 mass %, aY₂O₃ content of 3 mol %, average coefficient of thermal expansion α_(S)of 4.86×10⁻⁶/° C., and the α_(S)/α_(GaN) ratio of 0.832.YSZ-mullite-based sintered body E3 had a YSZ content of 35 mass %, aY₂O₃ content of 5 mol %, average coefficient of thermal expansion α_(S)of 5.80×10⁻⁶/° C., and the α_(S)/α_(GaN) ratio of 0.993.YSZ-mullite-based sintered body E4 had a YSZ content of 35 mass %, aY₂O₃ content of 6 mol %, average coefficient of thermal expansion α_(S)of 5.81×10⁻⁶/° C., and the α_(S)/α_(GaN) ratio of 0.995.YSZ-mullite-based sintered body E5 had a YSZ content of 35 mass %, aY₂O₃ content of 10 mol %, average coefficient of thermal expansion α_(S)of 5.85×10⁻⁶/° C., and the α_(S)/α_(GaN) ratio of 1.002.YSZ-mullite-based sintered body E6 had a YSZ content of 35 mass %, aY₂O₃ content of 20 mol %, average coefficient of thermal expansion α_(S)of 5.96×10⁻⁶/° C., and the α_(S)/α_(GaN) ratio of 1.020.YSZ-mullite-based sintered body E7 had a YSZ content of 35 mass %, aY₂O₃ content of 50 mol %, average coefficient of thermal expansion α_(S)of 6.27×10⁻⁶/° C., and the α_(S)/α_(GaN) ratio of 1.074.YSZ-mullite-based sintered body E8 had a YSZ content of 35 mass %, aY₂O₃ content of 100 mol %, average coefficient of thermal expansionα_(S) was not measured, and the α_(S)/α_(GaN) ratio was not calculated.

YSZ-mullite-based sintered body F1 had a YSZ content of 40 mass %, aY₂O₃ content of 0 mol %, average coefficient of thermal expansion α_(S)of 4.97×10⁻⁶/° C., and the α_(S)/α_(GaN) ratio of 0.851.YSZ-mullite-based sintered body F2 had a YSZ content of 40 mass %, aY₂O₃ content of 3 mol %, average coefficient of thermal expansion α_(S)of 5.07×10⁻⁶/° C., and the α_(S)/α_(GaN) ratio of 0.868.YSZ-mullite-based sintered body F3 had a YSZ content of 40 mass %, aY₂O₃ content of 5 mol %, average coefficient of thermal expansion α_(S)of 6.05×10⁻⁶/° C., and the α_(S)/α_(GaN) ratio of 1.036.YSZ-mullite-based sintered body F4 had a YSZ content of 40 mass %, aY₂O₃ content of 6 mol %, average coefficient of thermal expansion α_(S)of 6.06×10⁻⁶/° C., and the α_(S)/α_(GaN) ratio of 1.038.YSZ-mullite-based sintered body F5 had a YSZ content of 40 mass %, aY₂O₃ content of 10 mol %, average coefficient of thermal expansion α_(S)of 6.10×10⁻⁶/° C., and the α_(S)/α_(GaN) ratio of 1.045.YSZ-mullite-based sintered body F6 had a YSZ content of 40 mass %, aY₂O₃ content of 20 mol %, average coefficient of thermal expansion α_(S)of 6.21×10⁻⁶/° C., and the α_(S)/α_(GaN) ratio of 1.064.YSZ-mullite-based sintered body F7 had a YSZ content of 40 mass %, aY₂O₃ content of 50 mol %, average coefficient of thermal expansion α_(S)of 6.54×10⁻⁶/° C., and the α_(S)/α_(GaN) ratio of 1.120.YSZ-mullite-based sintered body F8 had a YSZ content of 40 mass %, aY₂O₃ content of 100 mol %, average coefficient of thermal expansionα_(S) was not measured, and the α_(S)/α_(GaN) ratio was not calculated.

YSZ-mullite-based sintered body G1 had a YSZ content of 70 mass %, aY₂O₃ content of 0 mol %, average coefficient of thermal expansion α_(S)of 4.99×10⁻⁶/° C., and the α_(S)/α_(GaN) ratio of 0.854.YSZ-mullite-based sintered body G2 had a YSZ content of 70 mass %, aY₂O₃ content of 3 mol %, average coefficient of thermal expansion α_(S)of 5.09×10⁻⁶/° C., and the α_(S)/α_(GaN) ratio of 0.872.YSZ-mullite-based sintered body G3 had a YSZ content of 70 mass %, aY₂O₃ content of 5 mol %, average coefficient of thermal expansion α_(S)of 6.07×10⁻⁶/° C., and the α_(S)/α_(GaN) ratio of 1.039.YSZ-mullite-based sintered body G4 had a YSZ content of 70 mass %, aY₂O₃ content of 6 mol %, average coefficient of thermal expansion α_(S)of 6.08×10⁻⁶/° C., and the α_(S)/α_(GaN) ratio of 1.041.YSZ-mullite-based sintered body G5 had a YSZ content of 70 mass %, aY₂O₃ content of 10 mol %, average coefficient of thermal expansion α_(S)of 6.12×10⁻⁶/° C., and the α_(S)/α_(GaN) ratio of 1.048.YSZ-mullite-based sintered body G6 had a YSZ content of 70 mass %, aY₂O₃ content of 20 mol %, average coefficient of thermal expansion α_(S)of 6.23×10⁻⁶/° C., and the α_(S)/α_(GaN) ratio of 1.067.YSZ-mullite-based sintered body G7 had a YSZ content of 70 mass %, aY₂O₃ content of 50 mol %, average coefficient of thermal expansion α_(S)of 6.56×10⁻⁶/° C., and the α_(S)/α_(GaN) ratio of 1.123.YSZ-mullite-based sintered body G8 had a YSZ content of 70 mass %, aY₂O₃ content of 100 mol %, average coefficient of thermal expansionα_(S) was not measured, and the α_(S)/α_(GaN) ratio was not calculated.

YSZ-mullite-based sintered body H1 had a YSZ content of 100 mass %, aY₂O₃ content of 0 mol %, average coefficient of thermal expansion α_(S)was not measured, and the α_(S)/α_(GaN) ratio was not calculated.YSZ-mullite-based sintered body H2 had a YSZ content of 100 mass %, aY₂O₃ content of 3 mol %, average coefficient of thermal expansion α_(S)was not measured, and the α_(S)/α_(GaN) ratio was not calculated.YSZ-mullite-based sintered body H3 had a YSZ content of 100 mass %, aY₂O₃ content of 5 mol %, average coefficient of thermal expansion α_(S)was not measured, and the α_(S)/α_(GaN) ratio was not calculated.YSZ-mullite-based sintered body H4 had a YSZ content of 100 mass %, aY₂O₃ content of 6 mol %, average coefficient of thermal expansion α_(S)was not measured, and the α_(S)/α_(GaN) ratio was not calculated.YSZ-mullite-based sintered body H5 had a YSZ content of 100 mass %, aY₂O₃ content of 10 mol %, average coefficient of thermal expansion α_(S)was not measured, and the α_(S)/α_(GaN) ratio was not calculated.YSZ-mullite-based sintered body H6 had a YSZ content of 100 mass %, aY₂O₃ content of 20 mol %, average coefficient of thermal expansion α_(S)was not measured, and the α_(S)/α_(GaN) ratio was not calculated.YSZ-mullite-based sintered body 117 had a YSZ content of 100 mass %, aY₂O₃ content of 50 mol %, average coefficient of thermal expansion α_(S)was not measured, and the α_(S)/α_(GaN) ratio was not calculated.YSZ-mullite-based sintered body H8 had a YSZ content of 100 mass %, aY₂O₃ content of 100 mol %, average coefficient of thermal expansionα_(S) was not measured, and the α_(S)/α_(GaN) ratio was not calculated.

A support substrate having a diameter of 4 inches (101.6 mm) and athickness of 1 mm was cut from each of the 57 types of theYSZ-mullite-based sintered bodies above, and opposing main surfaces ofeach support substrate were mirror-polished to thereby obtain 57 typesof support substrates A0, B1 to B8, C1 to C8, D1 to D8, E1 to E8, F1 toF8, G1 to G8, and H1 to H8. Namely, a content of YSZ to the total of YSZand mullite (a YSZ content), a content of Y₂O₃ (yttria) to YSZ (a Y₂O₃content), and an average coefficient of thermal expansion from 25° C. to800° C. of the 57 types of the support substrates above were equal to aYSZ content, a Y₂O₃ content, and an average coefficient of thermalexpansion from 25° C. to 800° C. of the 57 types of theYSZ-mullite-based sintered bodies above, respectively. Tables 2 to 8summarize these results. In Tables 2 to 8, “-” indicates that thatphysical property value was not measured or calculated.

(2) Sub Step of Forming Single Crystal Film on Underlying Substrate

Referring to FIG. 3(B), an Si substrate having a mirror-polished (111)plane as main surface 30 n and having a diameter of 5 inches (127 mm)and a thickness of 0.5 mm was prepared as underlying substrate 30.

A GaN film having a thickness of 0.4 μm was formed as single crystalfilm 13 on main surface 30 n of the Si substrate (underlying substrate30) above with the MOCVD method. Regarding film formation conditions, aTMG gas and an NH₃ gas were used as source gases, an H₂ gas was used asa carrier gas, a film formation temperature was set to 1000° C., and afilm formation pressure was set to 1 atmosphere. Main surface 13 m ofthe GaN film (single crystal film 13) thus obtained had a planeorientation having an off angle within ±1° with respect to the (0001)plane.

(3) Sub Step of Bonding Support Substrate and Single Crystal Film toEach Other

Referring to (C1) in FIG. 3(C), an SiO₂ film having a thickness of 300nm was formed on main surface 11 m of each of the 57 types of supportsubstrates A0, B1 to B8, C1 to C8, D1 to D8, E1 to E8, F1 to F8, G1 toG8, and H1 to H8 (support substrate 11) in FIG. 3(A) with the CVD(chemical vapor deposition) method. Then, by polishing the SiO₂ filmhaving a thickness of 300 nm on main surface 11 m of each of the 57types of support substrates (support substrate 11) above with CeO₂slurry, only an SiO₂ layer having a thickness of 270 nm was allowed toremain to serve as adhesive layer 12 a. Thus, pores in main surface 11 mof each of the 57 types of the support substrates (support substrate 11)above were buried to thereby obtain the SiO₂ layer (adhesive layer 12 a)having flat main surface 12 am and a thickness of 270 nm.

Referring also to (C2) in FIG. 3(C), an SiO₂ film having a thickness of300 nm was formed on main surface 13 n of the GaN film (single crystalfilm 13) formed on the Si substrate (underlying substrate 30) in FIG.3(B) with the CVD method. Then, by polishing this SiO₂ film having athickness of 300 nm with CeO₂ slurry, only an SiO₂ layer having athickness of 270 nm was allowed to remain to serve as adhesive layer 12b.

Referring next to (C3) in FIG. 3(C), main surface 12 am of the SiO₂layer (adhesive layer 12 a) formed on each of the 57 types of thesupport substrates (support substrate 11) above and main surface 12 bnof the SiO₂ layer (adhesive layer 12 b) formed on the GaN film (singlecrystal film 13) formed on the Si substrate (underlying substrate 30)were cleaned and activated by argon plasma, and thereafter main surface12 am of the SiO₂ layer (adhesive layer 12 a) and main surface 12 bn ofthe SiO₂ layer (adhesive layer 12 b) were bonded to each other, followedby heat treatment for 2 hours in a nitrogen atmosphere at 300° C.

(4) Sub Step of Removing Underlying Substrate

Referring to FIG. 3(D), a main surface on a back side (a side wheresingle crystal film 13 was not bonded) and a side surface of each of the57 types of the support substrates (support substrate 11) above werecovered and protected with wax 40, and thereafter the Si substrate(underlying substrate 30) was removed by etching using a mixed acidaqueous solution of 10 mass % of hydrofluoric acid and 5 mass of nitricacid. Thus, 57 types of composite substrates A0, B1 to B8, C1 to C8, D1to D8, E1 to E8, F1 to F8, G1 to G8, and H1 to H8 (composite substrate10) in which GaN films (single crystal films 13) were arranged on themain surface 11 m sides of the 57 types of the support substrates(support substrates 11) above respectively were obtained.

3. Step of Forming GaN-Based Film

Referring to FIG. 2(B), a GaN film (GaN-based film 20) was formed withthe MOCVD method on main surface 13 m (such a main surface being a(0001) plane) of the GaN film (single crystal film 13) of each of the 57types of the composite substrates (composite substrate 10) having adiameter of 4 inches (101.6 mm) obtained above and on a main surface ofa sapphire substrate having a diameter of 4 inches (101.6 mm) and athickness of 1 mm (such a main surface being a (0001) plane). In formingthe GaN film (GaN-based film 20), a TMG (trimethylgallium) gas and anNH₃ gas were used as source gases, an H₂ gas was used as a carrier gas,and a GaN buffer layer (GaN-based buffer layer 21) was grown to athickness of 50 nm at 500° C. and then a GaN single crystal layer(GaN-based single crystal layer 23) was grown to a thickness of 50 nm at1050° C. Here, a rate of growth of the GaN single crystal layer was 1μm/hr. Thereafter, 57 types of wafers A0, B1 to B8, C1 to C8, D1 to D8,E1 to E8, F1 to F8, G1 to G8, and H1 to H8 in which GaN films wereformed on the 57 types of the composite substrates above respectivelywere cooled to a room temperature (25° C.) at a rate of 10° C./min.

Regarding the 57 types of the wafers taken out of a film formationapparatus after cooling to a room temperature, warpage of the wafer andcrack count and dislocation density of the GaN film were determined.Here, a shape of warpage and an amount of warpage of the wafer weredetermined based on interference fringes observed at the main surface ofthe GaN film with FM200EWafer of Corning Tropel. Regarding crack countin the GaN film, the number of cracks per unit length was counted with aNomarski microscope, and evaluation as “extremely few”, “few”, “many”,and “extremely many” was made when the count was smaller than 1count/mm, when the count was not smaller than 1 count/mm and smallerthan 5 counts/mm, when the count was not smaller than 5 counts/mm andsmaller than 10 counts/mm, and when the count was not smaller than 10counts/mm, respectively. Dislocation density of the GaN film wasmeasured with CL (cathode luminescence) based on the number of darkpoints per unit area. It is noted that cracks generated in the GaN filmin the present Example were small without penetrating the film.

Wafer A0 was extremely many in cracks counted in the GaN film, and ashape of warpage, an amount of warpage, and dislocation density of theGaN film were not measured. Table 2 summarizes results.

Wafer B1 warped on the GaN film side in a recessed manner, an amount ofwarpage was 670 μm, cracks counted in the GaN film were many, anddislocation density of the GaN film was 5×10⁸ cm⁻². Wafer B2 warped onthe GaN film side in a recessed manner, an amount of warpage was 660 μm,cracks counted in the GaN film were many, and dislocation density of theGaN film was 5×10⁸ cm⁻². Wafer B3 warped on the GaN film side in arecessed manner, an amount of warpage was 655 μm, cracks counted in theGaN film were few, and dislocation density of the GaN film was 2×10⁸cm⁻². Wafer B4 warped on the GaN film side in a recessed manner, anamount of warpage was 650 μm, cracks counted in the GaN film were few,and dislocation density of the GaN film was 2×10⁸ cm⁻². Wafer B5 warpedon the GaN film side in a recessed manner, an amount of warpage was 645μm, cracks counted in the GaN film were few, and dislocation density ofthe GaN film was 2×10⁸ cm⁻². Wafer B6 warped on the GaN film side in arecessed manner, an amount of warpage was 610 μm, cracks counted in theGaN film were few, and dislocation density of the GaN film was 2×10⁸cm⁻². Wafer B7 warped on the GaN film side in a recessed manner, anamount of warpage was 480 μm, cracks counted in the GaN film were few,and dislocation density of the GaN film was 2×10⁸ cm⁻². Wafer B8 was fewin cracks counted in the GaN film, and a shape of warpage, an amount ofwarpage, and dislocation density of the GaN film were not measured.Table 2 summarizes results.

Wafer C1 warped on the GaN film side in a recessed manner, an amount ofwarpage was 665 μm, cracks counted in the GaN film were many, anddislocation density of the GaN film was 5×10⁸ cm⁻². Wafer C2 warped onthe GaN film side in a recessed manner, an amount of warpage was 657 μm,cracks counted in the GaN film were many, and dislocation density of theGaN film was 5×10⁸ cm⁻². Wafer C3 warped on the GaN film side in arecessed manner, an amount of warpage was 390 μm, cracks counted in theGaN film were few, and dislocation density of the GaN film was 2×10⁸cm⁻². Wafer C4 warped on the GaN film side in a recessed manner, anamount of warpage was 385 μm, cracks counted in the GaN film were few,and dislocation density of the GaN film was 2×10⁸ cm⁻². Wafer C5 warpedon the GaN film side in a recessed manner, an amount of warpage was 380μm, cracks counted in the GaN film were few, and dislocation density ofthe GaN film was 2×10⁸ cm⁻². Wafer C6 warped on the GaN film side in arecessed manner, an amount of warpage was 350 μM, cracks counted in theGaN film were few, and dislocation density of the GaN film was 2×10⁸cm⁻². Wafer C7 warped on the GaN film side in a recessed manner, anamount of warpage was 180 μm, cracks counted in the GaN film wereextremely few, and dislocation density of the GaN film was 1×10⁸ cm⁻².Wafer C8 was few in cracks counted in the GaN film, and a shape ofwarpage, an amount of warpage, and dislocation density of the GaN filmwere not measured. Table 3 summarizes results.

Wafer D1 warped on the GaN film side in a recessed manner, an amount ofwarpage was 660 urn, cracks counted in the GaN film were many, anddislocation density of the GaN film was 5×10⁸ cm⁻². Wafer D2 warped onthe GaN film side in a recessed manner, an amount of warpage was 650 μm,cracks counted in the GaN film were many, and dislocation density of theGaN film was 5×10⁸ cm⁻². Wafer D3 warped on the GaN film side in arecessed manner, an amount of warpage was 250 μm, cracks counted in theGaN film were few, and dislocation density of the GaN film was 2×10⁸cm⁻². Wafer D4 warped on the GaN film side in a recessed manner, anamount of warpage was 240 μm, cracks counted in the GaN film were few,and dislocation density of the GaN film was 2×10⁸ cm⁻². Wafer D5 warpedon the GaN film side in a recessed manner, an amount of warpage was 230μm, cracks counted in the GaN film were extremely few, and dislocationdensity of the GaN film was 1×10⁸ cm⁻². Wafer D6 warped on the GaN filmside in a recessed manner, an amount of warpage was 180 μm, crackscounted in the GaN film were extremely few, and dislocation density ofthe GaN film was 1×10⁸ cm⁻². Wafer D7 warped on the GaN film side in arecessed manner, an amount of warpage was 10 μm, cracks counted in theGaN film were few, and dislocation density of the GaN film was 2×10⁸cm⁻². Wafer D8 was few in cracks counted in the GaN film, and a shape ofwarpage, an amount of warpage, and dislocation density of the GaN filmwere not measured. Table 4 summarizes results.

Wafer E1 warped on the GaN film side in a recessed manner, an amount ofwarpage was 630 μm, cracks counted in the GaN film were many, anddislocation density of the GaN film was 5×10⁸ cm⁻². Wafer E2 warped onthe GaN film side in a recessed manner, an amount of warpage was 520 μm,cracks counted in the GaN film were many, and dislocation density of theGaN film was 5×10⁸ cm⁻². Wafer E3 warped on the GaN film side in arecessed manner, an amount of warpage was 150 μm, cracks counted in theGaN film were few, and dislocation density of the GaN film was 2×10⁸cm⁻². Wafer E4 warped on the GaN film side in a recessed manner, anamount of warpage was 120 μm, cracks counted in the GaN film wereextremely few, and dislocation density of the GaN film was 1×10⁸ cm⁻².Wafer E5 warped on the GaN film side in a recessed manner, an amount ofwarpage was 1 μm, cracks counted in the GaN film were extremely few, anddislocation density of the GaN film was 1×10⁸ cm⁻². Wafer E6 warped onthe GaN film side in a projecting manner, an amount of warpage was 7 μm,cracks counted in the GaN film were few, and dislocation density of theGaN film was 2×10⁸ cm⁻². Wafer E7 warped on the GaN film side in aprojecting manner, an amount of warpage was 12 μm, cracks counted in theGaN film were few, and dislocation density of the GaN film was 2×10⁸cm⁻². Wafer E8 was few in cracks counted in the GaN film, and a shape ofwarpage, an amount of warpage, and dislocation density of the GaN filmwere not measured. Table 5 summarizes results.

Wafer F1 warped on the GaN film side in a recessed manner, an amount ofwarpage was 500 μm, cracks counted in the GaN film were many, anddislocation density of the GaN film was 5×10⁸ cm⁻². Wafer F2 warped onthe GaN film side in a recessed manner, an amount of warpage was 480 μm,cracks counted in the GaN film were many, and dislocation density of theGaN film was 5×10⁸ cm⁻². Wafer F3 warped on the GaN film side in aprojecting manner, an amount of warpage was 10 μm, cracks counted in theGaN film were few, and dislocation density of the GaN film was 2×10⁸cm⁻². Wafer F4 warped on the GaN film side in a projecting manner, anamount of warpage was 10 μm, cracks counted in the GaN film were few,and dislocation density of the GaN film was 2×10⁸ cm⁻². Wafer F5 warpedon the GaN film side in a projecting manner, an amount of warpage was 11μm, cracks counted in the GaN film were few, and dislocation density ofthe GaN film was 2×10⁸ cm⁻². Wafer F6 warped on the GaN film side in aprojecting manner, an amount of warpage was 12 μm, cracks counted in theGaN film were few, and dislocation density of the GaN film was 2×10⁸cm⁻². Wafer F7 warped on the GaN film side in a projecting manner, anamount of warpage was 110 μm, cracks counted in the GaN film were few,and dislocation density of the GaN film was 2×10⁸ cm⁻². Wafer F8 was fewin cracks counted in the GaN film, and a shape of warpage, an amount ofwarpage, and dislocation density of the GaN film were not measured.Table 6 summarizes results.

Wafer G1 warped on the GaN film side in a recessed manner, an amount ofwarpage was 510 μm, cracks counted in the GaN film were extremely many,and dislocation density of the GaN film was 5×10⁸ cm⁻². Wafer G2 warpedon the GaN film side in a recessed manner, an amount of warpage was 490μm, cracks counted in the GaN film were extremely many, and dislocationdensity of the GaN film was 5×10⁸ cm⁻². Wafer G3 warped on the GaN filmside in a projecting manner, an amount of warpage was 10 μm, crackscounted in the GaN film were extremely many, and dislocation density ofthe GaN film was 2×10⁸ cm⁻². Wafer G4 warped on the GaN film side in aprojecting manner, an amount of warpage was 11 μm, cracks counted in theGaN film were extremely many, and dislocation density of the GaN filmwas 2×10⁸ cm⁻². Wafer G5 warped on the GaN film side in a projectingmanner, an amount of warpage was 11 μm, cracks counted in the GaN filmwere extremely many, and dislocation density of the GaN film was 2×10⁸cm⁻². Wafer G6 warped on the GaN film side in a projecting manner, anamount of warpage was 12 μm, cracks counted in the GaN film wereextremely many, and dislocation density of the GaN film was 2×10⁸ cm⁻².Wafer G7 warped on the GaN film side in a projecting manner, an amountof warpage was 110 μm, cracks counted in the GaN film were extremelymany, and dislocation density of the GaN film was 2×10⁸ cm⁻². Wafer G8was extremely many in cracks counted in the GaN film, and a shape ofwarpage, an amount of warpage, and dislocation density of the GaN filmwere not measured. Table 7 summarizes results.

All of wafers H1 to H8 were extremely many in cracks counted in the GaNfilm, and a shape of warpage, an amount of warpage, and dislocationdensity of the GaN film were not measured. Table 8 summarizes results.

4. Step of Removing Support Substrate

Referring to FIG. 2(C), the 57 types of the wafers obtained above wereimmersed in an aqueous solution of 10 mass % of hydrofluoric acid andthe 57 types of the support substrates (support substrate 11) above andthe SiO₂ layers were dissolved and removed. Thus, 57 types of GaN filmsA0, B1 to B8, C1 to C8, D1 to D8, E1 to E8, F1 to F8, G1 to G8, and H1to H8 (GaN-based film 20) formed on respective main surfaces 13 m of theGaN films (single crystal film 13) were obtained. In the 57 types of theGaN films (GaN-based film 20) above obtained by removing the 57 types ofthe support substrates (support substrate 11) above and the SiO₂ layersfrom the 57 types of the wafers above as well, warpage was found inmeasurement based on interference fringes observed with FM200EWafer ofCorning Tropel, and an extent of warpage in each of the 57 types of theGaN films above maintained an extent of warpage in each correspondingone of the 57 types of the wafers above.

TABLE 2 Wafer A0 Wafer B1 Wafer B2 Wafer B3 Wafer B4 Wafer B5 Wafer B6Wafer B7 Wafer B8 Composite YSZ Content (Mass %) 0 20 20 20 20 20 20 2020 Substrate Y₂O₃ Content (Mol %) 0 0 3 5 6 10 20 50 100 Coefficient ofThermal — 4.40 4.58 4.68 4.69 4.72 4.81 5.06 — Expansion α_(S) (10⁻⁶/°C.) α_(S)/α_(GaN) Ratio — 0.753 0.784 0.801 0.803 0.808 0.823 0.866 —Wafer Shape of Warpage [GaN Film — Recess Recess Recess Recess RecessRecess Recess — Side] Amount of Warpage [GaN — 670 660 655 650 645 610480 — Film] (μm) Cracks Counted in GaN Film Extremely Many Many Few FewFew Few Few Few many Dislocation Density of GaN — 5 5 2 2 2 2 2 — Film(10⁸ cm⁻²) Notes

TABLE 3 Wafer C1 Wafer C2 Wafer C3 Wafer C4 Wafer C5 Wafer C6 Wafer C7Wafer C8 Composite YSZ Content (Mass %) 25 25 25 25 25 25 25 25Substrate Y₂O₃ Content (Mol %) 0 3 5 6 10 20 50 100 Coefficient ofThermal 4.48 4.62 5.26 5.27 5.31 5.40 5.69 — Expansion α_(S) (10⁻⁶/° C.)α_(S)/α_(GaN) Ratio 0.767 0.791 0.901 0.903 0.909 0.925 0.974 — WaferShape of Warpage [GaN Recess Recess Recess Recess Recess Recess Recess —Film Side] Amount of Warpage [GaN 665 657 390 385 380 350 180 — Film](μm) Cracks Counted in GaN Many Many Few Few Few Few Extremely Few Filmfew Dislocation Density of 5 5 2 2 2 2 1 — GaN Film (10⁸ cm⁻²) Notes

TABLE 4 Wafer D1 Wafer D2 Wafer D3 Wafer D4 Wafer D5 Wafer D6 Wafer D7Wafer D8 Composite YSZ Content (Mass %) 30 30 30 30 30 30 30 30Substrate Y₂O₃ Content (Mol %) 0 3 5 6 10 20 50 100 Coefficient ofThermal 4.56 4.65 5.55 5.56 5.60 5.70 6.00 — Expansion α_(S) (10⁻⁶/° C.)α_(S)/α_(GaN) Ratio 0.781 0.796 0.950 0.952 0.959 0.976 1.027 — WaferShape of Warpage [GaN Recess Recess Recess Recess Recess Recess Recess —Film Side] Amount of Warpage 660 650 250 240 230 180 10 — [GaN Film](μm) Cracks Counted in GaN Many Many Few Few Extremely Extremely Few FewFilm few few Dislocation Density of 5 5 2 2 1 1 2 — GaN Film (10⁸ cm⁻²)Notes

TABLE 5 Wafer E1 Wafer E2 Wafer E3 Wafer E4 Wafer E5 Wafer E6 Wafer E7Wafer E8 Composite YSZ Content 35 35 35 35 35 35 35 35 Substrate (Mass%) Y₂O₃ Content (Mol %) 0 3 5 6 10 20 50 100 Coefficient of Thermal 4.774.86 5.80 5.81 5.85 5.96 6.27 — Expansion α_(S) (10⁻⁶/° C.)α_(S)/α_(GaN) Ratio 0.816 0.832 0.993 0.995 1.002 1.020 1.074 — WaferShape of Warpage Recess Recess Recess Recess Recess ProjectionProjection — [GaN Film Side] Amount of Warpage 630 520 150 120 1 7 12 —[GaN Film] (μm) Cracks Counted in Many Many Few Extremely Extremely FewFew Few GaN Film few few Dislocation Density of 5 5 2 1 1 2 2 — GaN Film(10⁸ cm⁻²) Notes

TABLE 6 Wafer F1 Wafer F2 Wafer F3 Wafer F4 Wafer F5 Wafer F6 Wafer F7Wafer F8 Composite YSZ Content 40 40 40 40 40 40 40 40 Substrate (Mass%) Y₂O₃ Content (Mol %) 0 3 5 6 10 20 50 100 Coefficient of Thermal 4.975.07 6.05 6.06 6.10 6.21 6.54 — Expansion α_(S) (10⁻⁶/° C.)α_(S)/α_(GaN) Ratio 0.851 0.868 1.036 1.038 1.045 1.064 1.120 — WaferShape of Warpage Recess Recess Projection Projection ProjectionProjection Projection — [GaN Film Side] Amount of Warpage 500 480 10 1011 12 110 — [GaN Film] (μm) Cracks Counted in Many Many Few Few Few FewFew Few GaN Film Dislocation Density of 5 5 2 2 2 2 2 — GaN Film (10⁸cm⁻²) Notes

TABLE 7 Wafer G1 Wafer G2 Wafer G3 Wafer G4 Wafer G5 Wafer G6 Wafer G7Wafer G8 Composite YSZ Content (Mass %) 70 70 70 70 70 70 70  70Substrate Y₂O₃ Content (Mol %) 0 3 5 6 10 20 50 100 Coefficient ofThermal 4.99 5.09 6.07 6.08 6.12 6.23 6.56 — Expansion α_(S) (10⁻⁶/° C.)α_(S)/α_(GaN) Ratio 0.854 0.872 1.039 1.041 1.048 1.067 1.123 — WaferShape of Warpage [GaN Recess Recess Projection Projection ProjectionProjection Projection — Film Side] Amount of Warpage 510 490 10 11 11 12110 — [GaN Film] (μm) Cracks Counted in GaN Extremely ExtremelyExtremely Extremely Extremely Extremely Extremely Extremely Film manymany many many many many many many Dislocation Density of 5 5 2 2 2 2 2— GaN Film (10⁸ cm⁻²) Notes

TABLE 8 Wafer H1 Wafer H2 Wafer H3 Wafer H4 Wafer H5 Wafer H6 Wafer H7Wafer H8 Composite YSZ Content (Mass %) 100 100 100 100 100 100 100 100Substrate Y₂O₃ Content (Mol %)  0  3  5  6  10  20  50 100 Coefficientof Thermal — — — — — — — — Expansion α_(S) (10⁻⁶/° C.) α_(S)/α_(GaN)Ratio — — — — — — — — Wafer Shape of Warpage [GaN — — — — — — — — FilmSide] Amount of Warpage [GaN — — — — — — — — Film] (μm) Cracks Countedin GaN Extremely Extremely Extremely Extremely Extremely ExtremelyExtremely Extremely Film many many many many many many many manyDislocation Density of GaN — — — — — — — — Film (10⁸ cm⁻²) Notes

Referring to Tables 2 to 8, by employing a composite substrate (wafersB3 to B7, C3 to C7, D3 to D7, E1 to E7, F1 to F7, and G1 to G7) having asupport substrate in which coefficient of thermal expansion α_(S) in amain surface was more than 0.8 time and less than 1.2 times (that is,0.8<(α_(S)/α_(GaN) ratio)<1.2) as high as coefficient of thermalexpansion α_(GaN) of GaN crystal, a GaN film less in warpage, low indislocation density, and excellent in crystallinity could be formed. Inaddition, from a point of view of further decrease in warpage anddislocation density of the GaN film, coefficient of thermal expansionα_(S) in a main surface of the support substrate of the compositesubstrate was preferably more than 0.9 time and less than 1.15 times(that is, 0.9<(α_(S)/α_(GaN) ratio)<1.15) as high as coefficient ofthermal expansion α_(GaN) of the GaN crystal (wafers C3 to C7, D3 to D7,E3 to E7, F3 to F7, and G3 to G7) and further preferably more than 0.95time and less than 1.1 times (that is, 0.95<(α_(S)/α_(GaN) ratio)<1.1)as high as coefficient of thermal expansion α_(GaN) of the GaN crystal(wafers C7, D3 to D7, E3 to E7, F3 to F6, and G3 to G6).

In addition, Table 9 summarizes relation between cracks counted in a GaNfilm (GaN-based film 20) grown on a GaN single crystal layer (GaN-basedsingle crystal layer 23) of each of the 57 types of the compositesubstrates and a YSZ content and a Y₂O₃ content of each of the 57 typesof support substrate 11 of the 57 types of composite substrate 10 inTable 2 to Table 8.

TABLE 9 Cracks Counted in GaN Y₂O₃ Content (Mol %) Film 0 3 5 6 10 20 50100 YSZ 0 Extremely many Content 20 Many Many Few Few Few Few Few Few(Mass %) 25 Many Many Few Few Few Few Extremely few Few 30 Many Many FewFew Extremely Extremely few Few Few few 35 Many Many Few ExtremelyExtremely Few Few Few few few 40 Many Many Few Few Few Few Few Few 70Extremely Extremely Extremely Extremely Extremely Extremely ExtremelyExtremely many many many many many many many many 100 ExtremelyExtremely Extremely Extremely Extremely Extremely Extremely Extremelymany many many many many many many many

Referring to Table 9, when a content of YSZ to the total of mullite (anAl₂O₃—SiO₂ composite oxide) and YSZ (yttria stabilized zirconia)contained in the support substrate of the composite substrate was notlower than 20 mass % and not higher than 40 mass % and more preferablynot lower than 25 mass % and not higher than 35 mass %, cracks countedin the GaN film (GaN-based film) formed on the GaN film (single crystalfilm) of the composite substrate significantly decreased. In addition,when a content of Y₂O₃ (yttria) to YSZ was not lower than 5 mol % andmore preferably not lower than 6 mol % and not higher than 50 mol %,cracks counted in the GaN film (GaN-based film) formed on the GaN film(single crystal film) of the composite substrate extremely significantlydecreased.

Though a case where a non-doped GaN film was formed on the compositesubstrate was shown in the example above, substantially the same resultsas in the example above were obtained also in a case where a GaN filmprovided with n- or p-type conductivity by doping was formed and in acase where a GaN film of which resistivity was raised by doping wasformed.

Further, in a case of forming a GaN-based film such as aGa_(x)In_(y)Al_(1-x-y)N film (0<x<1, y≧0, x+y≦1) instead of a GaN filmas well, results as in the example above were obtained. In particular,in a case of forming a Ga_(x)In_(y)Al_(1-x-y)N film (0.5<x<1, y≧0,x+y≦1) instead of a GaN film, substantially the same results as in theexample above were obtained.

Furthermore, a plurality of GaN-based films (specifically,Ga_(x)In_(y)Al_(1-x-y)N films (x>0, x+y≦1) and the like)) can also beformed by varying a composition ratio of such a group III element as Ga,In and Al. Namely, a plurality of GaN-based films such asGa_(x)In_(y)Al_(1-x-y)N films (x>0, y≧0, x+y≦1) and the like instead ofa GaN film can be formed by varying a composition ratio of such a groupIII element as Ga, In and Al.

In carrying out the present invention, a known dislocation loweringtechnique such as an ELO (Epitaxial Lateral Overgrowth) technique isapplicable in forming a GaN-based film.

In addition, after the GaN-based film is formed on the compositesubstrate, only the support substrate of the composite substrate or theentire composite substrate (the support substrate and the single crystalfilm) may be etched away. Here, the GaN-based film may be transferred toanother support substrate.

It should be understood that the embodiments and the examples disclosedherein are illustrative and non-restrictive in every respect. The scopeof the present invention is defined by the terms of the claims, ratherthan the description above, and is intended to include any modificationswithin the scope and meaning equivalent to the terms of the claims.

REFERENCE SIGNS LIST

10 composite substrate; 11 support substrate; 11 m, 12 m, 12 am, 12 bn,13 m, 13 n, 20 m, 21 m, 23 m, 30 n main surface; 12, 12 a, 12 b adhesivelayer; 13 single crystal film; 20 GaN-based film; 21 GaN-based bufferlayer; 23 GaN-based single crystal layer; 30 underlying substrate; and40 wax.

1-6. (canceled)
 7. A method of manufacturing a GaN-based film,comprising the steps of: preparing a composite substrate including asupport substrate dissoluble in hydrofluoric acid and a single crystalfilm arranged on a side of a main surface of said support substrate, acoefficient of thermal expansion in the main surface of said supportsubstrate being more than 0.8 time and less than 1.2 times as high as acoefficient of thermal expansion of GaN crystal; forming a GaN-basedfilm on a main surface of said single crystal film arranged on the sideof the main surface of said support substrate; and removing said supportsubstrate by dissolving the support substrate in hydrofluoric acid. 8.The method of manufacturing a GaN-based film according to claim 7,wherein said support substrate contains at least any of zirconia andsilica and a ZrO₂—SiO₂ composite oxide formed of zirconia and silica. 9.The method of manufacturing a GaN-based film according to claim 7,wherein said support substrate contains yttria stabilized zirconia andan Al₂O₃—SiO₂ composite oxide formed of alumina and silica.
 10. Themethod of manufacturing a GaN-based film according to claim 9, wherein acontent of said yttria stabilized zirconia to total of said Al₂O₃—SiO₂composite oxide and said yttria stabilized zirconia is not lower than 20mass % and not higher than 40 mass %.
 11. The method of manufacturing aGaN-based film according to claim 10, wherein a content of yttria tosaid yttria stabilized zirconia is not lower than 5 mol %.
 12. Themethod of manufacturing a GaN-based film according to claim 7, whereinan area of the main surface of said single crystal film of saidcomposite substrate is not smaller than 15 cm².
 13. The method ofmanufacturing a GaN-based film according to claim 7, wherein said stepof forming a GaN-based film includes sub steps of forming a GaN-basedbuffer layer on the main surface of said single crystal film and forminga GaN-based single crystal layer on a main surface of said GaN-basedbuffer layer.